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| GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D t NCHT RE FE duc T EN Pro New G (R) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) VDS 30V RDS(ON) 11m ID 60A D G * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) S Features * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Low Voltage DC/DC Converters * Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) * May be notched or flat Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratings and Thermal Characteristics (TC = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25C TC = 100C Symbol VDS VGS ID IDM PD TJ, Tstg TL RJC RJA Limit 30 Unit V 20 60 100 62.5 25 -55 to 150 275 2.0 62.5 A W C C C/W C/W 5/1/01 Operating Junction and Storage Temperature Range Lead Temperature (1/8" from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Notes: (1) Maximum DC current limited by the package GFP60N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 30V, VGS = 0V VDS 5V, VGS = 10V VGS = 10V, ID = 30A VGS = 4.5V, ID = 25A VDS = 10V, ID = 25A IS = 25A, VGS = 0V 30 1.0 3.0 100 1 60 9 13 40 0.9 1.3 11 16 V nA A A m S V Drain-Source On-State Resistance(1) Forward Transconductance(1) Diode Forward Voltage Dynamic (1) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Reverse Recovery Time Note: (1) Pulse test; pulse width 300 s, duty cycle 2% Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss trr VDS =15V, VGS =5V, ID =50A VDS = 15V, VGS = 10V ID = 50A 16 35 8 6 11 11 48 15 - - - 1850 315 145 160 22 60 nC VDD = 15V, RL = 15 ID 1A, VGEN = 10V RG = 6 VGS = 0V VDS = 15V f = 1.0MHZ IF = 25A, di/dt = 100A/s 20 20 80 30 - - - ns pF ns VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 80 VGS=10V 6.0V 4.0V 5.0V 4.5V 60 VDS = 10V 50 Fig. 2 - Transfer Characteristics ID -- Drain Source Current (A) ID -- Drain Current (A) 60 40 30 TJ = 125C --55C 10 0 25C 40 3.5V 20 20 3.0V 2.5V 0 0 1 2 3 4 5 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature 1.4 ID = 250A 0.03 0.025 0.02 Fig. 4 - On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (Normalized) 1.2 RDS(ON) -- On-Resistance () VGS = 4.5V 5V 1 0.015 10V 0.8 0.01 0.005 0 0.6 0.4 --50 --25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 30A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 6 - On-Resistance vs. Gate-to-Source Voltage 0.04 ID = 30A 10 Fig. 7 - Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 15A 8 0.035 RDS(ON) -- On-Resistance () 0.03 0.025 0.02 0.015 0.01 25C 0.005 0 2 4 6 8 10 TJ = 125C 6 4 2 0 0 10 20 30 35 VGS -- Gate-to-Source Voltage (V) Qg -- Charge (nC) Fig. 8 - Capacitance 2500 f = 1MHZ VGS = 0V 2000 Ciss 1500 100 Fig. 9 - Source-Drain Diode Forward Voltage VGS = 0V IS -- Source Current (A) C -- Capacitance (pF) 10 1 TJ = 125C 25C --55C 1000 500 0.1 Coss Crss 0 5 10 15 20 25 30 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GFP60N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 10 - Breakdown Voltage vs. Junction Temperature 1.15 1 Fig. 11 - Transient Thermal Impedance RJA (norm) -- Normalized Thermal Impedance ID = 250A BVDSS -- Breakdown Voltage (Normalized) 1.1 1.05 0.1 1 0.95 1. Duty Cycle, D = t1/t2 2. RJC(t) = RJC(norm) *RJC 3. RJC = 2.0C/W 4. TJ -- TC = PDM* RJC(t) 0.01 0.0001 0.001 0.01 0.1 1 10 0.9 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Pulse Duration (sec.) Fig. 12 - Power vs. Pulse Duration 1000 Single Pulse RJC = 2.0C/W TC = 25C 1000 Fig. 13 - Maximum Safe Operating Area 800 ID -- Drain Current (A) 100 10 0 s Power (W) 600 10 10 1m s m s 400 RDS(ON) Limit 100ms VGS = 10V Single Pulse RJC = 2.0C/W TC = 25C DC 200 0 0.0001 0.001 0.01 0.1 1 10 1 0.1 1 10 100 Pulse Duration (sec.) VDS -- Drain-Source Voltage (V) |
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